To meet the demand for high-density power conversion, Inventchip Technology has introduced two new TC3Pak (Topside Cooling 3Pak) topside-cooling, surface-mount packaged 1200V silicon carbide (SiC) MO

IVCT's 3B package 2000V silicon carbide (SiC) 4-phase boost power module (IV3B20023BA2) is providing a high-voltage and high-power-density solution for the PV Boost systerms.

The first batch of 3rd-generation 1200V SiC 35mΩ MOSFET products developed by Inventchip Technology (IVCT) has won orders from multiple key customers with excellent performance and quality. Nearly 2

Inventchip Technology will be exhibiting on May 6–8, 2025 at PCIM Europe 2025 in Nuremberg, Germany.