Solid State Transformer (SST) acts as the core "energy router" for new power systems, AI computing infrastructure and railway. High-voltage SiC MOSFETs are critical power devices that determine equipment power density, conversion efficiency and long-term operational reliability. As a leading SiC power semiconductor IDM and one-stop solution provider, InventChip has strategically prioritized medium and ultra-high voltage SiC technology developments. As a first step, a complete 3.3 kV SiC MOSFET bare die product portfolio for discrete devices and high-power modules was created.

Core indicators including switching losses and specific on-resistance match top global manufacturers, while key performance metrics such as high-temperature conduction and dynamic switching outperform comparable products. Multiple customers have completed full-process reliability validation. And InventChip has secured initial commercial orders from leading global railway suppliers and SST manufacturers. The R&D of 2.3 kV and 10 kV SiC process platforms is also push forward, enabling industrialization of high-end equipment including railway systems, wind-solar-storage micro-grids, high-power charging stations, Solid State Transformers and high-voltage energy storage systems.

Built on the mature 3.3 kV SiC process platform, InventChip has launched three standardized SiC product lines, paired with self-developed dedicated SiC isolated gate drivers to deliver a complete one-stop high-voltage SiC solution integrating power devices and driving ICs:

1. SiC MOSFET Bare Die IV3Q335S0BD

• Ratings: 3.3 kV / 50 Ω
• Application: Can be packaged into high-voltage solid-state relays, suitable for high-voltage energy storage systems.

2. Discrete Device IV3Q33050TH

• Ratings: 3.3 kV / 50 mΩ
• Package: TO-247-4 HV
• Features: 15.6 mm widened isolation clearance, fully compliant with strict high-voltage safety standards
• Target applications: Medium & small high-voltage conversion equipment such as high-voltage pulse power supplies

Figure 1: 3300 V SiC Discrete Device in TO-247-4 HV Package

3. Power Module IVXP332M3HA3

• Rating: 3.3 kV / 2.5 mΩ
• Topology: Half-Bridge
• Package: XPak
• Current capability: 750 A continuous DC current at ambient temperature, 1500 A peak pulse current
• Matching Driver Reference Design: Upcoming industrial IVCO1B12, a configurable current source gate driver IC with gate oxide leakage monitoring, negative drive voltage, with full protection functions.
• Target applications: Railway traction converters, medium-voltage wind & solar grid-connected systems, high-power medium-voltage motor drives

Figure 2: 3300 V SiC Half-Bridge Module in XPak Package;

Figure 3: XPak Module Reference Design based on IVCO1B12

At PCIM Europe 2026 held in June 2026, InventChip exhibited a megawatt-class converter prototype (rectifier & inverter) built around 3.3 kV XPak half-bridge modules and matching IVCO1B12 driver boards.

Figure 4: 3.3 kV Megawatt-Class Converter Prototype Displayed at PCIM Europe 2026

Figure 5: Schematic Diagram for Railway, Wind-Solar Storage & Medium-Voltage Motor Drive Applications

Compared with traditional silicon IGBT architectures, InventChip’s 3.3 kV SiC solution simplifies multi-stage power conversion topologies, drastically cuts equipment size and weight, and greatly improves power conversion efficiency. It addresses pervasive industry challenges of conventional silicon designs, including excessive switching losses, complex insulation layouts and heavy thermal management loads.

For a high-voltage semiconductor R&D initiative targeting 10 kV voltage ratings, InventChip collaborates with Zhejiang University on a core 10 kV SiC MOSFET development. At ISPSD 2025, the two parties jointly released a large-size 1 cm² 10 kV SiC MOSFET chip. Its specific on-resistance is lower than 120 mΩ·cm², approaching the theoretical performance limit of SiC materials.

Separately, the 2.3 kV SiC MOSFETs are undergoing process optimization and reliability validation, and will be commercially available soon.

As an IDM covering the full value chain of chip design, wafer fabrication and power electronics application, InventChip develops products closely aligned with downstream application requirements. We continuously advance proprietary 2.3 kV, 3.3 kV and 10 kV SiC core processes to build a full-range medium-to-ultra-high voltage SiC product lineup.

InventChip supplies standardized, mass-producible high-voltage SiC bare dies, discrete devices and power modules to accelerate large-scale commercial deployment of Solid State Transformers. We support the full performance upgrade of new power grids, AI computing infrastructure, railway, wind-solar energy storage and high-power charging stations, and will work alongside partners across the industrial chain to unlock broad market potential for high-voltage SiC technology.