上海瞻芯电子科技股份有限公司
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  • The IVCO1412 is an isolated single-channel gate driver with a peak sourcing and sinking current of 4A. This document introduces the SiC MOSFET gate drive solutions of using IVCO1412.
  • IVCO1411 is an isolated single-channel gate driver with 4A peak sink and source current. This document introduces the SiC MOSFET gate drive solutions of using IVCO1411.
  • IVCR1412 is a 6-pin compact drive in SOT-23 package and is one of the products in the NextDrive® series. This document introduces the SiC MOSFET gate drive solutions of using with lVCR1412.
  • The IVCR2404 is a 4A dual-channel, high-speed, low-side gate driver, capable of effectively and safely driving MOSFETs and IGBTs.
  • The IVCR1402Q is a high-speed 4A sink and source SiC MOSFET and IGBT driver.It is qualified by AEC-Q100. It is the first industrial SiC MOSFET and IGBT driver which includes negative voltage generation, desaturation and programmable UVLO in an 8-pin package.
  • The IVCR1401 is a high-speed 4A sink and source SiC MOSFET and IGBT driver. It is the first industrial SiC MOSFET and IGBT driver which includes negative voltage generation, desaturation and programmable UVLO in an 8-pin package.
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