Nexperia Enters Gallium Nitride Race with 600V / 60mΩ FET
Nexperia today announced its entry into the gallium nitride (GaN) FET market with the introduction of the 650-Volt GAN063-650WSA...
Nexperia today announced its entry into the gallium nitride (GaN) FET market with the introduction of the 650-Volt GAN063-650WSA...
Soitec announced a joint development program with Applied Materials on next-generation silicon carbide substrates. The program aims to p...
Bosch Semiconductor announced that it will be making silicon carbide (SiC) power semiconductors for automotive applications at its wafer...
The TIDA-010054 reference design from Texas Instruments (TI) provides an overview on the implementation of a single-phase dual acti...
Delphi Technologies PLC and Cree, Inc. have announced a partnership to utilize silicon carbide semiconductor device technology to ena...
Inspection and metrology are becoming more critical in the silicon carbide (SiC) industry amid a pressing need to find problematic defe...