Power Integrations announced the SIC1182K SCALE-iDriver™, a high-efficiency, single-channel silicon carbide (SiC) MOSFET gate driver that boasts the highest peak-output gate current available without an external boost stage. Devices can be configured to support different gate-drive voltage requirements matching the range of requirements seen in SiC-MOSFETs today; key applications include UPS, photovoltaic systems, servo drives, welding inverters, and power supplies.
The SIC1182K offers up to 8A output at a junction temperature of 125°C allowing these devices to support SiC-MOSFET inverter designs up to several hundred kilowatts without a booster stage. The device enables inverters with high system efficiency and allows the production of one design covering their entire portfolio of differently rated power inverters. A switching frequency of up to 150kHz supports multiple applications.
SCALE-iDriver SIC1182K gate drivers feature the company's high-speed FluxLink™ communications technology, significantly improving isolation capability. According to Power Integrations, FluxLink replaces optocouplers and capacitive or silicon-based solutions, significantly improving reliability and delivering reinforced isolation up to 1200V.
SCALE-iDriver devices also include system-critical protection features such as desaturation monitoring and current sense read out, primary and secondary under-voltage lock-out (UVLO), and Advanced Active Clamping (AAC). Moreover, the protection circuits provide safe shutdown within five microseconds, meeting the fast protection needs of SiC devices.
The SIC1182K SiC gate drivers exhibit high external magnetic field immunity, featuring a package that provides ≥9.5mm of creepage and clearance, using material that has the highest CTI level, CTI600, to IEC60112.
"Silicon carbide MOSFET technology opens the door for decreasing size and weight as well as reduced losses in power inverter systems. The SCALE-iDriver family with FluxLink™ technology enables safe, cost-effective designs for inverters with very few external components, ensuring functional safety as well as compact packaging and maximized efficiency," observed Michael Hornkamp, senior director of marketing for gate-driver products at Power Integrations.
According to the company, SCALE-iDriver technology minimizes the number of external components that are needed and reduces the BOM; tantalum or electrolytic capacitors are not required, and only one secondary winding is needed.
The driver allows the use of two-layer PCB, which increases design simplicity, cuts component count and eases supply-chain management.
Power Integrations' SCALE-iDriver SIC1182K SiC gate drivers meet IEC60664-1 isolation coordination for low-voltage equipment below 1000V and IEC61800-5-1 electric motor drive inverter regulations. UL 1577, 5kVac for 1 min, is pending and VDE0884-10 is in process.
Suitable for 600V/650V/1200V SiC MOSFET switches
±8A peak gate output current
Integrated FluxLink™ technology providing reinforced isolation
Advanced Active Clamping
UVLO primary and secondary side
Over-current fault turn-off
Short-circuit current fault turn-off
Rail-to-rail stabilized output voltage
Unipolar supply voltage for secondary-side
Up to 150kHz switching frequency
Propagation delay jitter ±5ns
-40°C to +125°C operating ambient temperature
High common-mode transient immunity
eSOP package with 9.5mm creepage and clearance
Protection / Safety Features
Under-voltage lock-out protection for primary and secondary-side including fault feedback
Over-current detection for SiC MOSFETs with current-sense terminal
Ultrafast short-circuit monitoring
Turn off over-voltage limitation (Advanced Active Clamping)
Full Safety and Regulatory Compliance
100% production partial discharge test
100% production HIPOT compliance testing
Reinforced insulation pending VDE V 0884-10 certification
UL 1577 recognition pending
Halogen-free and RoHS compliant
The SiC MOSFET gate drivers are available now, priced at $4.65 in 10,000 piece quantities.